Autor: |
Druzhynin, Anatoliy, Yerokhov, Valerij, Berchenko, Nicolas |
Zdroj: |
Eastern-European Journal of Enterprise Technologies; 2014, Vol. 1 Issue 5, p34-37, 4p |
Abstrakt: |
Hydrogen-saturated surfaces of multicrystalline silicon substrates Baysix with porous silicon, used in the photoelectric converters production were studied using mass-spectrometry methods. Hydrogen saturation was carried out by electrochemical hydrogenation of porous silicon on p-type multicrystalline silicon substrates Baysix with resistivity 1...10 ohm·sm. Comparison of multicrystalline silicon samples surfaces was carried out before and after hydrogenation in the electrolyte, based on hydrofluoric acid, both in the secondary ions spectra and in the image of elements distribution on the surface (mode of ion microprobe and mass-spectral ion microscope). 2D-ion images of the multicrystalline substrate surface were obtained on the mass-spectrometer TOF5 SIMS using the current of hydrogen secondary ions H+ and molecular SiH2+. A number of samples were measured, depending on the electrochemical treatment time in the electrolyte. Analysis of hydrogenation modes, studied by the relative current intensity of the hydrogen secondary ions H+ of the surface of multicrystalline silicon sample Baysix shows that hydrogenation turns into saturation after two hours of treatment. Dynamic etching mode on the mass-spectrometer TOF5 SIMS with determining the hydrogen amount from the surface deep into the studied sample shows that hydrogen concentration, determined by the intensity of secondary ions H+ is higher on the surface and monotonously reduces deep into the sample. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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