| Autor: |
Bolam, Ronald J., Ramachandran, Vidhya, Coolbaugh, Doug, Watson, Kimball M. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Apr2003, Vol. 50 Issue 4, p941, 4p, 1 Black and White Photograph, 1 Diagram, 10 Graphs |
| Abstrakt: |
In this paper, we discuss the electrical characteristics and reliability of UV transparent Si[sub 3]N[sub 4] metal-insulator-metal (MIM) capacitors. We examine film thicknesses in the range of 55 to 25 nm with capacitance densities from 1.2 ff/µm² to 2.8 ff//µm², respectively, for single MIM capacitors. A new approach for projecting the dielectric reliability of these films extends the limits of maximum operating voltage. Accounting for temperature acceleration and area scaling, the projected lifetimes can be met for a wide range of operating conditions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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