| Autor: |
Soon Cheon Cho, Toshiro Kaneko, Hiroyasu Ishida, Rikizo Hatakeyama |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2015, Vol. 117 Issue 12, p123301-1-123301-5, 5p, 1 Diagram, 6 Graphs |
| Abstrakt: |
The nitrogen-atom endohedral fullerene (N@C60) has been synthesized by controlling the plasma ion irradiation energy (Ei) and fullerene (C60) behavior in the sublimation phase. We examined the relationship between the synthesis purity of N@C60 [molar concentration ratio of N@C60 to pristine fullerene (C60)] and Ei, which was controlled by changing the substrate bias voltages (Vsub ) and gas pressure (PN2) during the plasma irradiation process. High-density nitrogen-molecular ions (N2+) with a suitable Ei near 80 eV are confirmed to be the optimum condition of the nitrogen plasma for the synthesis of high-purity N@C60. In addition, high sublimation of C60 contributes to a higher yield due to the high internal energy of C60 and the related cage defects that are present under these conditions. As a result, a purity of 0.83% is realized for the first time, which is almost two orders of magnitude higher than that using other methods. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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