| Autor: |
Khrypko, S. L., Kidalov, V. V., Kolominska, E. V. |
| Předmět: |
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| Zdroj: |
Journal of Nano- & Electronic Physics; 2015, Vol. 7 Issue 1, p01003-1-01003-3, 3p |
| Abstrakt: |
This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopores on the surface of indium phosphide, which allows us to understand the mechanisms and the establishment of technological regimes anodic structures indium phosphide to produce a variety of devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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