| Autor: |
Pereyra, Pedro, Mendoza-Figueroa, M. G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2015, Vol. 117 Issue 11, p114306-1-114306-7, 7p, 1 Diagram, 12 Graphs |
| Abstrakt: |
Transport properties of electrons through biased double barrier semiconductor structures with finite transverse width wy, in the presence of a channel-mixing transverse electric field εT (along the y-axis), were studied. We solve the multichannel Schrödinger equation using the transfer matrix method and transport properties, like the conductance G and the transmission coefficients Tij have been evaluated as functions of the electrons' energy E and the transverse and longitudinal (bias) electric forces, fT and fb. We show that peak-suppression effects appear, due to the applied bias. Similarly, coherent interference of wave-guide states induced by the transverse field is obtained. We show also that the coherent interference of resonant wave-guide states gives rise to resonant conductance, which can be tuned to produce broad resonant peaks, implying operation frequencies of the order of 10 THz or larger. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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