Autor: |
Baeyens, Yves, Georgiou, George, Weiner, Joseph S., Leven, Andreas, Houtsma, Vincent, Paschke, Peter, Lee, Q., Kopf, Rose F., Yang Yang, Chua, L., Chen, C., Liu, C.T., Young-Kai Chen |
Předmět: |
|
Zdroj: |
IEEE Journal of Solid-State Circuits; Sep2002, Vol. 37 Issue 9, p1152, 8p, 5 Black and White Photographs, 2 Diagrams, 6 Graphs |
Abstrakt: |
Examines the indium phosphide double heterojunction bipolar InP-based transistor integrated circuits for 40-Gb/s and higher bitrate lightwave transceivers. Performance of a number of analog circuits; Implementation of analog functions of 40-Gb/s transceivers; Combination of device speed and breakdown voltage. |
Databáze: |
Complementary Index |
Externí odkaz: |
|