| Autor: |
Golenkov, A. G., Zhuravlev, K. S., Gumenjuk-Sichevska, J. V., Lysiuk, I. O., Sizov, F. F. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2015, Vol. 18 Issue 1, p40-45, 6p |
| Abstrakt: |
Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10-10 W/Hz1/2 in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-µm technology) can reach NEPopt ≈ 6·10-12 W/Hz1/2, and it is 3-fold lower than that for Si MOSFET (in 0.35-µm technology). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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