| Autor: |
Zonensain, Oren, Fadida, Sivan, Fisher, Ilanit, Juwen Gao, Chattopadhyay, Kaushik, Harm, Greg, Mountsier, Tom, Danek, Michal, Eizenberg, Moshe |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/23/2015, Vol. 106 Issue 9, p1-4, 4p, 1 Chart, 4 Graphs |
| Abstrakt: |
One of the main challenges facing the integration of metals as gate electrodes in advanced MOS devices is control over the Fermi level position at the metal/dielectric interface. In this study, we demonstrate the ability to tune the effective work function (EWF) of W-based electrodes by process modifications of the atomic layer deposited (ALD) films. Tungsten carbo-nitrides (WCxNy) films were deposited via plasma-enhanced and/or thermal ALD processes using organometallic precursors. The process modifications enabled us to control the stoichiometry of the WCxNy films. Deposition in hydrogen plasma (without nitrogen based reactant) resulted in a stoichiometry of WC0.4 with primarily W-C chemical bonding, as determined by x-ray photoelectron spectroscopy. These films yielded a relatively low EWF of 4.2 ± 0.1 eV. The introduction of nitrogen based reactant to the plasma or the thermal ALD deposition resulted in a stoichiometry of WC0.1N0.6-0.8 with predominantly W-N chemical bonding. These films produced a high EWF of 4.7 ± 0.1 eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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