A 6-bit drift-resilient readout scheme for multi-level Phase-Change Memory.
| Autor: | Athmanathan, Aravinthan, Stanisavljevic, Milos, Cheon, Junho, Kang, Seokjoon, Ahn, Changyong, Yoon, Junghyuk, Shin, Minchul, Kim, Taekseung, Papandreou, Nikolaos, Pozidis, Haris, Eleftheriou, Evangelos |
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| Zdroj: | 2014 IEEE Asian Solid-State Circuits Conference (A-SSCC); 2014, p137-140, 4p |
| Databáze: | Complementary Index |
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