Effect of dopant concentration on the pore formation of porous silicon on n-type silicon.
Autor: | Nadia, Siti, Ali, Nihad K., Ahmad, Mohd Ridzuan, Haidary, Sazan M |
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Zdroj: | 2014 IEEE 5th International Conference on Photonics (ICP); 2014, p53-55, 3p |
Databáze: | Complementary Index |
Externí odkaz: |