Effect of dopant concentration on the pore formation of porous silicon on n-type silicon.

Autor: Nadia, Siti, Ali, Nihad K., Ahmad, Mohd Ridzuan, Haidary, Sazan M
Zdroj: 2014 IEEE 5th International Conference on Photonics (ICP); 2014, p53-55, 3p
Databáze: Complementary Index