Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz.
| Autor: | Jain, Vibhor, Kessler, T., Gross, B. J., Pekarik, J. J., Candra, P., Gray, P. B., Sadhu, B., Valdes-Garcia, A., Cheng, P., Camillo-Castillo, R. A., Newton, K., Natarajan, A., Reynolds, S. K., Harame, D. L. |
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| Zdroj: | 2014 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 2014, p96-99, 4p |
| Databáze: | Complementary Index |
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