High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications.

Autor: Whitaker, Bret, Cole, Zach, Passmore, Brandon, Martin, Daniel, McNutt, Ty, Lostetter, Alex, Ericson, M. Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., Mantooth, Alan, Francis, Matt, Lamichhane, Ranjan, Shepherd, Paul, Glover, Michael
Zdroj: 2014 IEEE Workshop on Wide Bandgap Power Devices & Applications; 2014, p36-40, 5p
Databáze: Complementary Index