Pronounced enhancement of the photoluminescence intensity in tensile-strained and heavily n-doped (4×1019 at.cm−3) Ge/Si epilayers.
| Autor: | Luong, T. K. P., Le Thanh, V., Ghrib, A., Kurdi, M. El, Boucaud, P. |
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| Zdroj: | 11th International Conference on Group IV Photonics (GFP); 2014, p225-226, 2p |
| Databáze: | Complementary Index |
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