S5-H7: GaN-HEMT technology for high power millimeter-wave amplifier.
| Autor: | Makiyama, Kozo, Ozaki, Shirou, Okamoto, Naoya, Ohki, Toshihiro, Niida, Yoshitaka, Kamada, Yoichi, Joshin, Kazukiyo, Watanabe, Keiji |
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| Zdroj: | 2014 Lester Eastman Conference on High Performance Devices (LEC); 2014, p1-4, 4p |
| Databáze: | Complementary Index |
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