Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.
Autor: | Rossetto, Isabella, Rampazzo, Fabiana, Gerardin, Simone, Meneghini, Matteo, Bagatin, Marta, Zanandrea, Alberto, Paccagnella, Alessandro, Meneghesso, Gaudenzio, Zanoni, Enrico, Dua, Christian, di Forte-Poisson, Marie-Antoinette, Aubry, Raphael, Oualli, Mourad, Delage, Sylvain L. |
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Zdroj: | 2014 44th European Solid State Device Research Conference (ESSDERC); 2014, p381-384, 4p |
Databáze: | Complementary Index |
Externí odkaz: |