Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

Autor: Rossetto, Isabella, Rampazzo, Fabiana, Gerardin, Simone, Meneghini, Matteo, Bagatin, Marta, Zanandrea, Alberto, Paccagnella, Alessandro, Meneghesso, Gaudenzio, Zanoni, Enrico, Dua, Christian, di Forte-Poisson, Marie-Antoinette, Aubry, Raphael, Oualli, Mourad, Delage, Sylvain L.
Zdroj: 2014 44th European Solid State Device Research Conference (ESSDERC); 2014, p381-384, 4p
Databáze: Complementary Index