10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems.
| Autor: | Pala, Vipindas, Brunt, Edward V., Cheng, Lin, O'Loughlin, Michael, Richmond, Jim, Burk, Albert, Allen, Scott T., Grider, David, Palmour, John W., Scozzie, Charles J. |
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| Zdroj: | 2014 IEEE Energy Conversion Congress & Exposition (ECCE); 2014, p449-454, 6p |
| Databáze: | Complementary Index |
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