| Autor: |
Dogru, Selim, Dagli, Nadir |
| Zdroj: |
Journal of Lightwave Technology; Feb2014, Vol. 32 Issue 3, p435-439, 5p |
| Abstrakt: |
Novel electro-optic modulators in compound semiconductor epilayers using substrate removal techniques are reported. Epilayer consists of a p-i-n junction in which i layer is composed of an InGaAlAs/InAlAs MQW. This creates an optical mode with very strong vertical confinement and overlapping very well with the large electric field of the reverse biased p-i-n junction. This approach combined with the large quadratic electro-optic coefficient due to MQW improves efficiency of modulation significantly. Mach-Zehnder electro-optic modulators fabricated using this approach has 0.2 V (0.6 V) Vπ for 3 (1) mm long electrodes at 1.55 μm under push pull drive corresponding to record modulation efficiency of 0.06 V·cm. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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