Three-Dimensional Full-Wave Electromagnetics and Nonlinear Hot Electron Transport With Electronic Band Structure for High-Speed Semiconductor Device Simulation.

Autor:	Grupen, Matt
Předmět:	SEMICONDUCTOR devices ELECTRONIC equipment ELECTROMAGNETISM HOT carriers ELECTRON scattering GALLIUM arsenide transistors
Zdroj:	IEEE Transactions on Microwave Theory & Techniques; Dec2014 Part 1, Vol. 62 Issue 12, p2868-2877, 10p
Abstrakt:	For predictive simulation of high-speed electronic components, an accurate and numerically efficient hot electron transport model is solved simultaneously with Maxwell's full-wave vector field equations. The transport model is based on ideal Fermi gas kinetics and incorporates electronic band structure as well as the essential electron scattering mechanisms. It couples self-consistently to full-wave electromagnetics through a field discretization scheme based on the relationship between Delaunay and Voronoi meshes. Three-dimensional simulations of different GaAs transistor designs produce dc and high-frequency results that compare well with measured data. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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