| Autor: |
Cyril P. Sadia, Joselito Muldera, Elmer S. Estacio, Armando S. Somintac, Arnel A. Salvador, Christopher T. Que, Kohji Yamamoto, Masahiko Tani |
| Zdroj: |
Applied Physics Express; Mar2015, Vol. 8 Issue 3, p1-1, 1p |
| Abstrakt: |
We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensional growth mode. The scheme allows growth of a p-InAs layer 600 nm to 1.0 µm thick. Growth performed without GaAs and growth interruption resulted in decomposition of the p-InAs. When the scheme is used, the ensuing p-InAs first follows quasi-two-dimensional growth before favoring faceted islanding. Under 800-nm-wavelength femtosecond laser excitation, the p-InAs layer generates terahertz signals 70% of that of bulk p-InAs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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