| Autor: |
Peng Zhang, Sheng-Lei Zhao, Bin Hou, Chong Wang, Xue-Feng Zheng, Jin-Cheng Zhang, Yue Hao, Xiao-Hua Ma |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Mar2015, Vol. 24 Issue 3, p1-1, 1p |
| Abstrakt: |
We present an AlGaN/GaN high-electron mobility transistor (HEMT) device with both field plate (FP) and low-density drain (LDD). The LDD is realized by the injection of negatively charged fluorine (F–) ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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