| Autor: |
Padilla, Alvaro, Burr, Geoffrey W., Shenoy, Rohit S., Raman, Karthik V., Bethune, Donald S., Shelby, Robert M., Rettner, Charles T., Mohammad, Juned, Virwani, Kumar, Narayanan, Pritish, Deb, Arpan K., Pandey, Rajan K., Bajaj, Mohit, Murali, K. V. R. M., Kurdi, Bulent N., Gopalakrishnan, Kailash |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Mar2015, Vol. 62 Issue 3, p963-971, 9p |
| Abstrakt: |
Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultralow leakage, and high ON-current densities exhibited by back-end-of-the-line-friendly access devices based on copper-containing mixed-ionic-electronic-conduction (MIEC) materials. Hall effect measurements confirm that the electronic current is hole dominated; a commercial semiconductor modeling tool is adapted to model MIEC. Motion of large populations of copper ions and vacancies leads to exponential increases in hole current, with a turn-ON voltage that depends on material bandgap. Device simulations match experimental observations as a function of temperature, electrode aspect ratio, thickness, and device diameter. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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