Characterization of Physical Parameter-Based Reliability on the Negative Bias Illumination Stress with Wavelength-Dependence in Amorphous Silicon Thin-Film Transistors.

Autor:	Jeong, Hyun Kwang, Hur, Inseok, Kim, Woojoon, Kim, Jaehyeong, Kong, Dongsik, Kim, Yongsik, Bae, Minkyung, Choi, Sunwoong, Kim, Dong Myong, Kim, Dae Hwan, Jung, Keum-Dong, Park, Mun-Soo, Yoo, Moon-Hyun
Předmět:	LIGHTING research ELECTRONIC density of states DENSITY of states AMORPHOUS silicon THIN film transistors PHOTONS
Zdroj:	SID Symposium Digest of Technical Papers; Jun2012, Vol. 43 Issue 1, p1133-1136, 4p
Abstrakt:	We characterized the subgap density-of-states (DOS)-based reliability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). Physical origins of the negative bias illumination stress (NBIS)-induced threshold voltage shift (ΔVT) with wavelength-dependence are quantitatively and systematically investigated. As a result, the photon energy is closely related to a creation of subgap states and the rate of ΔVOX (charge trapping into the gate insulator) /ΔVT is determined by the relation between the photon energy and the band offset. Our methodology is expected to be very useful for the development of next generation large-area high performance active matrix liquid crystal display (AMLCD) technology. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Plný text