| Autor: |
Šermukšnis, E., Liberis, J., Ramonas, M., Matulionis, A., Toporkov, M., Liu, H. Y., Avrutin, V., Özgür, Ü., Morkoç, H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2015, Vol. 117 Issue 6, p065704-1-065704-8, 8p, 1 Diagram, 2 Charts, 5 Graphs |
| Abstrakt: |
Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from pulsed hotelectron noise measurements at room temperature. The relaxation time increases from ~0.17 ps to ~1.8 ps when the electron density increases from 1.4×1017 cm-3 to 1.3×1020 cm-3. A local minimum is resolved near an electron density of 1.4×1019cm-3. The longest energy relaxation time (1.8 ps), observed at the highest electron density, is in good agreement with the published values obtained by optical time-resolved luminescence and absorption experiments. Monte Carlo simulations provide a qualitative interpretation of our observations if hot-phonon accumulation is taken into account. The local minimum of the electron energy relaxation time is explained by the ultrafast plasmon-assisted decay of hot phonons in the vicinity of the plasmon-LO-phonon resonance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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