| Autor: |
Bhandaru, S., Hu, S., Fleetwood, D. M., Weiss, S. M. |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Nuclear Science; Feb2015 Part 2, Vol. 62 Issue 1, p323-328, 6p |
| Abstrakt: |
The performance of silicon ring resonators exposed to 10-keV X-ray and 662-keV gamma radiation is reported. Unpassivated rings having no native oxide exhibit a blue-shift in resonance wavelength with increasing total dose, which is attributed to surface oxidation that is accelerated in the presence of high energy radiation. Unpassivated rings exposed to 145~\krad(SiO _2) of 10-keV X-rays or gamma rays exhibit blue-shifts significantly larger than the full-width at half-maximum of the resonance, leading to a more than 10 dB change in transmission. No changes in the transmission of passivated rings were observed upon irradiation. Therefore, passivated rings can function as radiation-tolerant elements in optoelectronic circuitry. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
