| Autor: |
Ohsawa, Takashi, Fujita, Katsuyuki, Higashi, Tomoki, Iwata, Yoshihisa, Kajiyama, Takeshi, Asao, Yoshiyuki, Sunouchi, Kazumasa |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; Nov2002, Vol. 37 Issue 11, p1510, 13p, 6 Black and White Photographs, 10 Diagrams, 18 Graphs |
| Abstrakt: |
Reports on the development of a memory design using a one-transistor gain cell on silicon-on-insulator. Ability of the cell to achieve a 4F² cell using self-aligned contact technologies; Proof of scalability with respect to a cell signal; Verification of basic operation by device simulation and hardware measurement; Introduction of an array driving method. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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