A 44–mm² Four-Bank Eight-Word Page-Read 64–Mb Flash Memory With Flexible Block Redundancy and Fast Accurate Word-Line Voltage Controller.

Autor: Tanzawa, Toru, Umezawa, Akira, Taura, Tadayuki, Shiga, Hitoshi, Hara, Tokumasa, Takano, Yoshinori, Miyaba, Takeshi, Tokiwa, Naoya, Watanabe, Kentaro, Watanabe, Hiroshi, Masuda, Kazunori, Naruke, Kiyomi, Kato, Hideo, Atsumi, Shigeru
Předmět:
Zdroj: IEEE Journal of Solid-State Circuits; Nov2002, Vol. 37 Issue 11, p1485, 8p, 14 Black and White Photographs, 12 Diagrams, 2 Charts, 7 Graphs
Abstrakt: Reports on the development of a 64–megabit flash memory with flexible block redundancy and fast accurate word-line voltage controller. Introduction of a negative-gate channel-erase NOR flash memory cell technology; Characteristic of the chip; Power supply voltage for flash memories.
Databáze: Complementary Index