| Autor: |
Dong-Liang Zhang, Chun-Lai Xue, Xu Zhang, Hui Cong, Zhi Liu, Guang-Ze Zhang, Qi-Ming Wang, Bu-Wen Cheng |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Feb2015, Vol. 24 Issue 2, p1-1, 1p |
| Abstrakt: |
Optical gain characteristics of Ge1−xSnx are simulated systematically. With an injection carrier concentration of 5 × 1018/cm3 at room temperature, the maximal optical gain of Ge0.922Sn0.078 alloy (with n-type doping concentration being 5 × 1018/cm3) reaches 500 cm−1. Moreover, considering the free-carrier absorption effect, we find that there is an optimal injection carrier density to achieve a maximal net optical gain. A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density. The simulation values of the device threshold current density Jth are 6.47 kA/cm2 (temperature: 200 K, and λ = 2050 nm), 10.75 kA/cm2 (temperature: 200 K, and λ = 2000 nm), and 23.12 kA/cm2 (temperature: 300 K, and λ = 2100 nm), respectively. The results indicate the possibility to obtain a Si-based short-wave infrared Ge1−xSnx laser. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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