| Autor: |
Grant, N. E., Rougieux, F. E., Macdonald, D., Bullock, J., Wan, Y. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2015, Vol. 117 Issue 5, p055711-1-055711-8, 8p, 1 Chart, 7 Graphs |
| Abstrakt: |
We investigate a recombination active grown-in defect limiting the bulk lifetime (Τbulk) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80°C and 400°C, Τbulk was found to increase from ~500 μs to ~1.5 ms. By isochronal annealing the p-type samples between 80°C and 400°C for 30 min, the annihilation energy (Eann) of the defect was determined to be 0.3ann<0.7 eV. When the annihilated samples were phosphorus gettered at 880°C or subject to 0.2 sun illumination for 24 h, Τbulk was found to degrade. However, when the samples were subsequently annealed at temperatures between 250 and 400°C, the defect could be re-annihilated. The experimental results suggest that the defect limiting the lifetime in the p-type FZ silicon is not related to fast diffusing metallic impurities but rather to a lattice-impurity or an impurity-impurity metastable defect. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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