A Novel Strained Si[sub0.7]Ge[0.3] Surface-Channel pMOSFET With an ALD TiN/Al[sub 2]O[sub 3]/HfAlO[sub x]/Al[sub 2]O[sub 3] Gate Stack.

Autor:	Wu, D., Lindgren, A.-C., Persson, S., Sjoblom, G., von Haartman, M., Seger, J., Hellstrom, P.-E., Olsson, J., Blom, H.-O., Zhang, S.-L., Ostling, M., Vainonen-Ahlgren, E., Li, W.-M., Tois, E., Tuominen, M.
Předmět:	CHEMICAL vapor deposition METAL oxide semiconductor field-effect transistors SILICON GERMANIUM
Zdroj:	IEEE Electron Device Letters; Mar2003, Vol. 24 Issue 3, p171, 3p, 1 Diagram, 5 Graphs
Abstrakt:	Describes the novel strained SiGE surface-channel pMOSFET with an atomic layer chemical vapor deposition techniques. Enhancement of hole mobility in compressible strained SiGe layers; Increase of the demand for low gate leakage current; Influence of interface states on extracted effective mobility.
Databáze:	Complementary Index
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