| Autor: |
Jiang, C. S., Contreras, M. A., Mansfield, L. M., Moutinho, H. R., Egaas, B., Ramanathan, K., Al-Jassim, M. M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/26/2015, Vol. 106 Issue 4, p1-5, 5p, 1 Chart, 4 Graphs |
| Abstrakt: |
We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 photovoltaic thin films using the nano-electrical probes of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. With increasing bandgap, the potential imaging shows significant increases in both the large potential features due to extended defects or defect aggregations and the potential fluctuation due to unresolvable point defects with single or a few charges. The resistance imaging shows increases in both overall resistance and resistance nonuniformity due to defects in the subsurface region. These defects are expected to affect open-circuit voltage after the surfaces are turned to junction upon device completion. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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