| Autor: |
Marco Malinverni, Jean-Michel Lamy, Denis Martin, Lise Lahourcade, Eric Feltin, Julien Dorsaz, Antonino Castiglia, Marco Rossetti, Marcus Duelk, Christian Vélez, Nicolas Grandjean |
| Zdroj: |
Applied Physics Express; Feb2015, Vol. 8 Issue 2, p1-1, 1p |
| Abstrakt: |
We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal–organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 °C, exhibit state-of-the-art electrical characteristics and prevent the indium-rich quantum wells from thermal degradation. Narrow ridge-waveguide lasers with high-reflectivity coatings show a threshold current density of 9.7 kA·cm−2, a threshold voltage of 5.4 V, and a lasing wavelength of 501 nm. The internal optical loss and material gain of the epitaxial structures are also measured and discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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