| Autor: |
Xuan Shen, Ahmadi-Majlan, K., Ngai, Joseph H., Di Wu, Dong Su |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/19/2015, Vol. 106 Issue 3, p1-5, 5p, 1 Color Photograph, 2 Black and White Photographs, 1 Graph |
| Abstrakt: |
We investigated the interfacial structure of hetero-epitaxial SrZr0.68Ti0.32O3 thin film deposited on (001) Ge single crystal via transmission electron microscopy (TEM). The results from highresolution scanning TEM and electron energy-loss spectroscopy show an atomically abrupt interface without secondary phase. We found misfit dislocations with Burgers vector of 1/2a (111) and threading dislocations with Burgers vector of a (100). Furthermore, we observed the coupling between dislocation half-loop and anti-phase boundary induced by the lattice terrace of Ge along (100) direction and their decoupling after annealing. We proposed models based on half-loop theory to interpret the coupling and the dislocation reactions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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