| Autor: |
Litovchenko, P. G., Pavlovska, N. T., Pavlovskyy, Yu. V., Ugrin, Yu. O., Luka, G., Ostrovskyy, I. P. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2014, Vol. 17 Issue 4, p416-420, 5p |
| Abstrakt: |
The effect of 8.6·1017 n/cm² with fast neutron irradiation on the magnetic susceptibility of Si0.97Ge0.03 thread-like crystals (whiskers) with impurity concentration near metal-insulator junction has been studied. Significant differences have been observed in the change of magnetic susceptibility of irradiated whiskers and bulk Cz-Si. The low-temperature (4.2...40 K) changes of magnetoresistance in magnetic fields up to 14 T, caused by irradiation, have been studied. It has been established that at temperatures near 4.2 K, a significant contribution to the conductivity is made by light charge carriers of low concentration but with high mobility. The level supplying these charge carriers has the energy of ε = 2.1 meV, and with application of magnetic field it increases up to ε = 2.5 meV in approx. 10 T field. It demonstrates the fact that the reason of magnetoresistance, beside the magneto-field decrease of mobility, is the magneto-field decrease in the free carrier concentration. At temperatures approx. 40 K, conductivity is due to holes, the activation energy whereof is ε = 11.5 meV, which is practically independent of the magnetic field. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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