| Autor: |
Lee, Kwang-Hee, Bulliard, Xavier, Satoh, Ryu-Ichi, Ro, Takkyun, Lim, Seon-Jeong, Jin, Yong Wan, Im, Dongmo, Jung, Jungkyu, Lee, Myungwon, Leem, Dong-Seok, Kim, Kyu-Sik, Heo, Chul-Joon, Yagi, Tadao, Lee, Sangyoon, Sul, Sangchul, Na, Kyoungwon, Lee, Tae-Yon, Park, Kyung-Bae, Lee, Gae Hwang, Han, Moon Gyu |
| Předmět: |
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| Zdroj: |
Scientific Reports; 1/16/2015, p7708, 1p |
| Abstrakt: |
Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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