| Autor: |
De Freitas, L. R., Da Silva, E. C., Mansanaresa, A. M., Pimentel, M. B. C., Eleutério Filho, S., Batista, J. A. |
| Zdroj: |
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p104510-1-104510-5, 5p, 1 Diagram, 4 Graphs |
| Abstrakt: |
We investigated the effect of electrostatic discharge on n-channel metal-oxide-semiconductor field-effect transistors using the thermoreflectance microscopy. The gate terminals of the transistors were submitted to electrostatic pulses on a zap system that respects the human body model. The pulse intensity varied from 40 to 140 V in a cumulative sequence. Electrical characterization showed that the transistor threshold voltage was no longer positive for pulses of 110 V and higher. No significant changes in the thermoreflectance maps were observed in these cases. For pulses of 140 V a large leakage current appeared, and the thermoreflectance maps revealed strong peaks (localized spot) associated with the induced damage. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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