| Autor: |
Sun, Y., Cheng, S. F., Chen, G., Woo, R. L., Hicks, R. F. |
| Zdroj: |
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p103512-1-103512-5, 5p, 2 Black and White Photographs, 1 Chart, 6 Graphs |
| Abstrakt: |
Indium phosphide (001) surfaces were exposed to 0.61-mTorr trimethylantimony in a metalorganic vapor-phase epitaxy reactor. The antimony surface composition increased rapidly with dosage and saturated at 22.0 at. % for temperatures between 450 and 600 °C. The results indicate that a thin layer of InSb formed on the surface, ~6.8 Å thick. Strain from the lattice mismatch caused faceting in the [110] direction, whereas the formation of Sb dimer bonds relieved the strain in the [-110] direction. As a result, narrow ridges formed that ranged from 4 to 10 nm wide and from 3.0 to 18.0 Å high, depending on the antimony coverage. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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