| Autor: |
Carnes, Matthew E., Knutson, Christopher C., Nadarajah, Athavan, Jackson, Milton N., Oliveri, Anna F., Norelli, Kevin M., Crockett, Brandon M., Bauers, Sage R., Moreno-Luna, Hidekel A., Taber, Benjamen N., Pacheco, Daniel. J., Olson, Jarred Z., Brevick, Kaylena R., Sheehan, Claire E., Johnson, Darren W., Boettcher, Shannon W. |
| Zdroj: |
Journal of Materials Chemistry C; 2014, Vol. 2 Issue 40, p8492-8496, 5p |
| Abstrakt: |
Flat-[Ga13(μ3-OH)6(μ-OH)18(H2O)24](NO3)15 (Ga13) and heterometallic [Ga13−xInx(μ3-OH)6(μ-OH)18(H2O)24](NO3)15 (x = 5, 4) clusters were synthesized by the electrolysis of metal nitrate salt solutions to directly form, without purification, aqueous precursor inks for InxGa13−xOy semiconducting films in <2 h. Raman spectroscopy and 1H-NMR spectroscopy confirm the presence of [Ga13−xInx(μ3-OH)6(μ-OH)18(H2O)24(NO3)15] clusters. Bottom-gate thin-film transistors were fabricated using ∼15 nm-thick Ga13−xInxOy films as the active channel layer, displaying turn-on voltages of −2 V, and on/off current ratios greater than 106. The average channel mobility of the transistors fabricated from the cluster solutions generated by electrolysis was ∼5 cm−2 V−1s−1 which was more than twice that of transistors fabricated from control solutions with the simple nitrate salt precursors of ∼2 cm−2 V−1s−1. Electrochemical cluster synthesis thus provides a simple and direct route to aqueous precursors for solution-processed inorganic electronics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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