| Autor: |
Kim, Jaeho, Ohsaki, Hiroyuki, Katsurai, Makoto |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Plasma Science; Jan2015 Part 3, Vol. 43 Issue 1, p480-484, 5p |
| Abstrakt: |
Surface wave plasma (SWP), produced using microwave power, has attracted considerable attention for use in chemical vapor deposition (CVD) for the synthesis of carbon nanomaterials. In our previous work, a method, in which a negative direct current voltage is applied to a thin metal plate attached to the dielectric window, was reported for the reducing of plasma space potential in an SWP. Here, we demonstrate that a sheath potential >180 V, created at the plasma-dielectric boundary by the method, allows the synthesis of diamond-embedded carbon thin films even on nonpretreated silicon substrates at a gas pressure as low as 30 mTorr and a substrate temperature as low as 420 °C with a low CO concentration (2%) in H2 gas. These results show that the control of the sheath potential at the plasma-dielectric boundary can enhance the performance of an SWP in CVD applications. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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