| Autor: |
Das, Chittaranjan, Henkel, Karsten, Tallarida, Massimo, Schmeiβer, Dieter, Gargouri, Hassan, Kärkkänen, Irina, Schneidewind, Jessica, Gruska, Bernd, Arens, Michael |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jan/Feb2015, Vol. 33 Issue 1, p1-8, 8p |
| Abstrakt: |
Titanium oxide (TiO2) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO2 films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance-voltage and current-voltage measurements. In all samples, the authors found a significant presence of Ti3+ states, with the lowest content in the PE-ALD grown TiO2 films. The observation of Ti3+ states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti3+ states and leakage current density. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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