Autor: |
van den Bruele, Fieke J., Smets, Mireille, Illiberi, Andrea, Creyghton, Yves, Buskens, Pascal, Roozeboom, Fred, Poodt, Paul |
Předmět: |
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Zdroj: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jan/Feb2015, Vol. 33 Issue 1, p1-6, 6p |
Abstrakt: |
The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18µΩ cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100-120 °C. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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