| Autor: |
Yasuhiro Iijima, Ryo Usuda, Kazuo Uchida, Shinji Nozaki |
| Zdroj: |
Japanese Journal of Applied Physics; Aug2014, Vol. 53 Issue 8S1, p1-1, 1p |
| Abstrakt: |
This study describes the low temperature process to form the gate oxide of MOSFETs using a SiO nano-powder and post UV oxidation. The high-quality SiO2 gate oxide was successfully formed on a silicon substrate by vacuum evaporation of the SiO nano-powder followed by the post UV oxidation in steam at 200 °C. However, further lowering of the oxidation temperature to 150 °C degraded the insulating property and increased the interface trap density. In order to improve the SiO2/Si interface quality, the Si surface was irradiated by vacuum UV (VUV) using a Xe excimer lamp before evaporation of the SiO nano-powder. This substrate treatment has substantially improved the SiO2/Si interface quality. The physical mechanisms of the VUV and UV oxidation are discussed in order to understand the low-temperature formation of the SiO2. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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