| Autor: |
Mizuno, Tomohisa, Hasegawa, Mitsuo, Ikeda, Keiji, Nojiri, Masashi, Horikawa, Tsuyoshi |
| Zdroj: |
Japanese Journal of Applied Physics; Apr2011, Vol. 50 Issue 4S, p1-1, 1p |
| Abstrakt: |
We have experimentally studied an abrupt lateral-relaxed/strained layer heterojunction for ballistic complementary metal oxide semiconductor (CMOS) transistors, which is fabricated by a local O+ ion-induced relaxation technique for strained semiconductors on a buried oxide layer. We have demonstrated that strained substrates in various conditions are suddenly relaxed at a critical recoil energy of O+ ions at the strained semiconductor/buried oxide layer interface. Moreover, after O+ ion implantation into strained substrates with a SiO2 mask as well as post-annealing processes, we have successfully formed lateral relaxed/strained Si layers with an abrupt strain distribution at the mask edge, according to Raman spectroscopy analysis of implanted strained substrates. In addition, strained Si layers even under the 50-nm length stripe SiO2 mask region can still keep over 60% of the strain value in strained Si layers with a large area. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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