| Autor: |
Murata, Koichi, Neumann, Péter Lajos, Koyano, Tamotsu, Yasutake, Yuhsuke, Nittoh, Koh-ichi, Sakamoto, Kunihiro, Fukatsu, Susumu, Miki, Kazushi |
| Zdroj: |
Japanese Journal of Applied Physics; Nov2012, Vol. 51 Issue 11S, p1-1, 1p |
| Abstrakt: |
We studied the Bi wire-δ-doping process to achieve a high concentration of Bi donors in Si. Our process has two steps: (i) burial of Bi nanowires in Si by molecular beam epitaxy, and (ii) activation of Bi atoms in the δ-doped layer by laser annealing. The peak concentration of Bi atoms in the δ-doped layer is controlled by two parameters: the coverage of surfactant layer, and the growth temperature during the Si cap-layer growth, whose maximum concentration is larger than 1020 cm-3. Photoluminescence and electrical carrier transport measurements reveal that dense Bi atoms are activated upon heating the area at close to the melting point of Si. As a result, our doping process results in Bi donors in the wire-δ-doped layer with concentration of >1018 cm-3. This will be useful for establishing next-generation, quantum information processing platform. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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