| Autor: |
Fujisawa, Takafumi, Abe, Kenichi, Watabe, Shunichi, Miyamoto, Naoto, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro |
| Zdroj: |
Japanese Journal of Applied Physics; Apr2010, Vol. 49 Issue 4S, p1-1, 1p |
| Abstrakt: |
Random telegraph signal (RTS) noise shows discrete and stochastic switching in two or more states at a drain current or threshold voltage. The capture and emission of carriers in individual traps near a silicon–gate insulator film interface induce RTS noise phenomena. RTS noise has become a crucial problem in analog devices and other devices. To suppress RTS noise, it is necessary to determine the energy level of traps. Time constant ratio has a strong relationship with the energy level of traps in gate insulator films. In this paper, we extract a large number of RTS data sets with large-scale array test patterns and evaluate the gate-bias voltage dependences of time constant ratio and amplitude. We demonstrate that the energy level of traps distributes uniformly at a drain current of at least 0.1–1.0 µA. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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