| Autor: |
Gareev, Rashid, Stromberg, Frank, Buchmeier, Matthias, Keune, Werner, Back, Christian, Wende, Heiko |
| Zdroj: |
Applied Physics Express; Mar2012, Vol. 5 Issue 3, p1-1, 1p |
| Abstrakt: |
We study antiferromagnetic coupling and interface diffusion in Fe/Si/MgO/Fe structures grown by molecular beam epitaxy. The Fe/Si/Fe samples with a 1.2-nm-thick Si spacer demonstrate antiferromagnetic coupling J1∼-1.5 mJ/m2 and prevailing interdiffusion at the top Si/Fe interface, as revealed by conversion electron Mössbauer spectroscopy. For combined Si/MgO spacers with 0.9-nm-thick Si, interdiffusion continuously reduces upon changing the MgO thickness from 0.3 to 0.5 nm accompanied by a decrease of antiferromagnetic coupling from |J1|∼1 mJ/m2 to |J1|∼0.002 mJ/m2. We emphasize that monolayer-scaled engineering of insulating spacers is a promising tool for the precise control of antiferromagnetic coupling and interface diffusion. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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