| Autor: |
Murakami, Takahiro, Ando, Makoto, Sadachika, Norio, Yoshida, Takaki, Miura-Mattausch, Mitiko |
| Zdroj: |
Japanese Journal of Applied Physics; Apr2008, Vol. 47 Issue 4S, p1-1, 1p |
| Abstrakt: |
In this work, a silicon-on-insulator (SOI) metal–oxide–silicon field-effect transistor (MOSFET) model for circuit simulation is reported, which covers also the floating-body effect induced by the additional charge generated through impact ionization. The model is based on the complete surface-potential description and solves the Poisson equation with inclusion of the impact ionization. The developed compact SOI-MOSFET model is verified to reproduce two-dimensional-device simulation results very well, and shows the characteristic potential increase at the back side of the SOI layer. The steep drain-current (Ids) increase at high drain-voltages (Vds), caused by the floating-body effect, is also accurately captured. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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