| Autor: |
Schroter, Michael, Haferlach, Max, Pacheco-Sanchez, Anibal, Mothes, Sven, Sakalas, Paulius, Claus, Martin |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jan2015, Vol. 62 Issue 1, p52-60, 9p |
| Abstrakt: |
A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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