Autor: |
Wirthlin, Michael, Lee, David, Swift, Gary, Quinn, Heather |
Předmět: |
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Zdroj: |
IEEE Transactions on Nuclear Science; Dec2014 Part 1, Vol. 61 Issue 6, p3080-3087, 8p |
Abstrakt: |
Extracting information about MCUs from SEU data sets can be a challenge without physical layout information. Many modern static-random access memory (SRAM) components interleave memory cells to improve the robustness of error-correcting codes (ECC) that detect and correct errors in the memory array. Bit interleaving has also become popular with other components with large SRAM arrays, including field-programmable gate arrays (FPGAs). In this paper, we present a technique for extracting MCUs statistically from radiation test data. Further, we use this technique to extract MCU information from a 28-nm FPGA that uses interleaving to protect the configuration memory. [ABSTRACT FROM PUBLISHER] |
Databáze: |
Complementary Index |
Externí odkaz: |
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