| Autor: |
Okamoto, Dai, Sometani, Mitsuru, Harada, Shinsuke, Kosugi, Ryoji, Yonezawa, Yoshiyuki, Yano, Hiroshi |
| Předmět: |
|
| Zdroj: |
IEEE Electron Device Letters; Dec2014, Vol. 35 Issue 12, p1176-1178, 3p |
| Abstrakt: |
We propose another process for fabricating 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO2/4H-SiC interface by thermal annealing with a BN planar diffusion source. The interface state density near the conduction band edge of 4H-SiC was effectively reduced by the B diffusion and the fabricated 4H-SiC MOSFETs showed a peak field-effect mobility of 102 \mathrmcm^\mathrm \mathbf 2 /Vs. The obtained high channel mobility cannot be explained by counter doping because B atoms act as acceptors in 4H-SiC. We suggest that the interfacial structural change of SiO2 may be responsible for the reduced trap density and enhanced channel mobility. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
