| Autor: |
Kim, Jeong-Kyu, Kim, Gwang-Sik, Nam, Hyohyun, Shin, Changhwan, Park, Jin-Hong, Kim, Jong-Kook, Cho, Byung Jin, Saraswat, Krishna C., Yu, Hyun-Yong |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Dec2014, Vol. 35 Issue 12, p1185-1187, 3p |
| Abstrakt: |
We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n+-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n+-IL provides much lower contact resistivity, resulting in \sim 5 \times lower contact resistivity than 1\times 10^{\mathrm {\mathbf {-8 }}}~\Omega - \mathrm{cm}^{\mathrm {\mathbf {2}}}$ , specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n+-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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